Surface electrical degradation for low mass ion implanted SiO2: Dependence on ion mass, energy and dose rate

by S. M. Gonzalez de Vicente, A. Morono, E. R. Hodgson
Reference:
Surface electrical degradation for low mass ion implanted SiO2: Dependence on ion mass, energy and dose rate (S. M. Gonzalez de Vicente, A. Morono, E. R. Hodgson), In FUSION ENGINEERING AND DESIGN, volume 82, 2007. (24th Symposium on Fusion Technology (SOFT-24), Warsaw, POLAND, SEP 11-15, 2006)
Bibtex Entry:
@article{ ISI:000250980100140,
Author = {de Vicente, S. M. Gonzalez and Morono, A. and Hodgson, E. R.},
Title = {{Surface electrical degradation for low mass ion implanted SiO2:
   Dependence on ion mass, energy and dose rate}},
Journal = {{FUSION ENGINEERING AND DESIGN}},
Year = {{2007}},
Volume = {{82}},
Number = {{15-24}},
Pages = {{2567-2571}},
Month = {{OCT}},
Note = {{24th Symposium on Fusion Technology (SOFT-24), Warsaw, POLAND, SEP
   11-15, 2006}},
DOI = {{10.1016/j.fusengdes.2007.02.020}},
ISSN = {{0920-3796}},
Unique-ID = {{ISI:000250980100140}},
}

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