Displacement damage dose and implantation temperature effects on the trapping and release of deuterium implanted into SiC

by P. Munoz, I. Garcia-Cortes, F. J. Sanchez, A. Morono, M. Malo, E. R. Hodgson
Reference:
Displacement damage dose and implantation temperature effects on the trapping and release of deuterium implanted into SiC (P. Munoz, I. Garcia-Cortes, F. J. Sanchez, A. Morono, M. Malo, E. R. Hodgson), In JOURNAL OF NUCLEAR MATERIALS, volume 493, 2017.
Bibtex Entry:
@article{ ISI:000408044000012,
Author = {Munoz, P. and Garcia-Cortes, I. and Sanchez, F. J. and Morono, A. and
   Malo, M. and Hodgson, E. R.},
Title = {{Displacement damage dose and implantation temperature effects on the
   trapping and release of deuterium implanted into SiC}},
Journal = {{JOURNAL OF NUCLEAR MATERIALS}},
Year = {{2017}},
Volume = {{493}},
Pages = {{96-101}},
Month = {{SEP}},
DOI = {{10.1016/j.jnucmat.2017.06.016}},
ISSN = {{0022-3115}},
EISSN = {{1873-4820}},
ResearcherID-Numbers = {{Morono, Alejandro/H-2100-2016
   Garcia-Cortes, Isabel/H-3341-2015}},
ORCID-Numbers = {{Garcia-Cortes, Isabel/0000-0002-5223-391X}},
Unique-ID = {{ISI:000408044000012}},
}

This entry was posted by . Bookmark the permalink.