Radiation induced deuterium absorption dependence on irradiation temperature, dose rate, and gas pressure for SiC

by E. R. Hodgson, A. Morono, M. Malo, M. Verdu, F. J. Sanchez
Reference:
Radiation induced deuterium absorption dependence on irradiation temperature, dose rate, and gas pressure for SiC (E. R. Hodgson, A. Morono, M. Malo, M. Verdu, F. J. Sanchez), In FUSION ENGINEERING AND DESIGN, volume 124, 2017. (29th Symposium on Fusion Technology (SOFT), Prague, CZECH REPUBLIC, SEP 05-09, 2016)
Bibtex Entry:
@article{ ISI:000419411900234,
Author = {Hodgson, E. R. and Morono, A. and Malo, M. and Verdu, M. and Sanchez, F.
   J.},
Title = {{Radiation induced deuterium absorption dependence on irradiation
   temperature, dose rate, and gas pressure for SiC}},
Journal = {{FUSION ENGINEERING AND DESIGN}},
Year = {{2017}},
Volume = {{124}},
Pages = {{1127-1130}},
Month = {{NOV}},
Note = {{29th Symposium on Fusion Technology (SOFT), Prague, CZECH REPUBLIC, SEP
   05-09, 2016}},
DOI = {{10.1016/j.fusengdes.2017.02.081}},
ISSN = {{0920-3796}},
EISSN = {{1873-7196}},
Unique-ID = {{ISI:000419411900234}},
}

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